This document is a technical datasheet for the Toshiba 1SV252, a silicon epitaxial pin type diode designed for use as an RF attenuator in the VHF to UHF frequency bands. The device features a JEDEC EIAJ SC-70 package and includes detailed specifications such as reverse voltage ratings of 50V and forward current capabilities of 50mA.
The datasheet provides comprehensive electrical characteristics, including typical values for reverse current (0.1 pA at 50V), forward voltage drop (0.95V at 50mA), total capacitance (0.25 pF), and series resistance. It also includes graphical data illustrating the relationship between reverse voltage, forward current, junction temperature, and frequency.
| Reverse Voltage (VR) | 50 V |
|---|---|
| Forward Current (IF) | 50 mA |
| Junction Temperature (Tj) | 125 °C |
| Storage Temperature Range | -55~125 °c |
| Package Type | JEDEC EIAJ SC-70 |
| Reverse Current (IR) | 0.1 pA |
| Forward Voltage (VF) | 0.95 V |
| Total Capacitance (Ct) | 0.25 pF |
The maximum reverse voltage rating is 50 V.
The typical forward voltage is 0.95 V when the forward current is 50 mA.
The maximum junction temperature is 125 °C.