This document is a technical datasheet for the Toshiba 1SV10264, a silicon epitaxial planar type variable capacitance diode. It is specifically designed for AM radio band tuning applications and features a high capacitance ratio of approximately 23 and a typical Q factor of 400.
| Junction Temperature (Tj) | 125 °C |
|---|---|
| Storage Temperature Range (Tstg) | -55~125 °C |
| Capacitance Ratio (Cov/Co5y) | 23 (Typ.) |
| Figure of Merit Q | 400 (Typ.) |
The device is designed specifically for AM radio band tuning applications.
Yes, the product is available in matched groups with a capacitance tolerance of 3.0%.