This document is a technical datasheet for the Toshiba 1SV103K, a silicon epitaxial planar type variable capacitance diode. The device is specifically designed for FM radio band tuning applications and features a small package design with low series resistance (typical value of 0.35 ohms).
| Reverse Voltage (VR) | 32 V |
|---|---|
| Junction Temperature (Tj) | 125 °C |
| Storage Temperature Range (Tstg) | -55~125 °C |
| Series Resistance (rg) | 0.35 ohms (Typ.) |
| Capacitance at 8V (Cav) | 37 - 42 pF |
| Capacitance at 80V (C3ov) | 13.2 - 16.2 pF |
| Weight | 0.13g |
The maximum reverse voltage rating is 32 V.
Each unit weighs 0.13 g.