IXTQ 69N30P is a N-Channel Enhancement Mode Power MOSFET with VDSS = 300 V, ID25 = 69 A and RDS(on) = 49 mΩ. It features international standard packages, unclamped inductive switching (UIS) rating and low package inductance.
This document is a technical datasheet for the IXYS IXTQ 69N30P and IXTT 69N30P, which are N-Channel Enhancement Mode Power MOSFETs utilizing PolarHTTM DMOS transistors. The devices are available in TO-3P (IXTQ) and TO-268 (IXTT) international standard packages.
| Drain-Source Voltage (VDS) | 300 V |
|---|---|
| Continuous Drain Current (ID) at 25°C | 69 A |
| On-Resistance (RDS(on)) typical | 49 mΩ |
| Package Type IXTQ | TO-3P |
| Package Type IXTT | TO-268 |
The maximum junction temperature (TJ) is 150°C.
Yes, the datasheet states it is UIS rated.