30N60P is a N-channel enhancement mode avalanche rated power MOSFET produced by IXYS. Its maximum voltage is 600V, the maximum current is 30A, and the on-resistance is less than 240mΩ. The product has the characteristics of fast recovery diode, unclamped inductive switching (UIS) rating, international standard packages, and low package inductance.
This document provides technical specifications and characteristics for the IXYS 30N60P series of N-channel enhancement mode power MOSFETs. The devices are avalanche rated and available in multiple international standard packages including TO-247, TO-3P, TO-268, and PLUS220.
| Drain-Source Voltage (V_DSS) | 600 V |
|---|---|
| Continuous Drain Current (I_D) | 30 A |
| Power Dissipation (P_D) | 540 W |
| Gate-Source Threshold Voltage (Typical) | 4.8 V |
Yes, the Power MOSFET is Avalanche Rated.
The device supports a continuous drain current of 30 A at a temperature of 25°C.
The maximum junction temperature rating is 150 °C.
A mounting torque of 1.13/10 Nmilb.in. is specified for these package types.