IXTU01N80 is a high voltage MOSFET produced by IXYS company. Its features are international standard JEDEC TO-251 AA, TO-252 AA packages, low RDS (on) HDMOSTM process, rugged polysilicon gate cell structure and fast switching times.
This document is a preliminary datasheet for the IXYS IXTU 01N80 and IXTY 01N80, which are N-Channel Enhancement Mode High Voltage MOSFETs. The devices are available in international standard JEDEC TO-251 AA and TO-252 AA packages.
| Package Type | JEDEC TO-251 AA, TO-252 AA |
|---|---|
| Process Technology | HDMOS process |
| Gate-Source Voltage (Max) | +20 V |
| Drain Current (Continuous) | 100 mA |
| Power Dissipation (Typical) | 25 W |