This document describes the features and characteristics of the PolarHVTM Power MOSFET IXTQ 36N50P produced by IXYS, including international standard packages, Unclamped Inductive Switching (UIS) rating, low package inductance, etc.
This document is a technical datasheet for the IXYS IXTQ 36N50P and IXTT 36N50P, which are N-channel enhancement mode Power MOSFETs. The devices are available in TO-268 (IXTT) and TO-3P (IXTQ) packages.
| Drain-Source Voltage (VDS) | 500 V |
|---|---|
| Gate Threshold Voltage (VGS(th)) | 2.5 to 5.0 V |
| Continuous Drain Current (ID25) | 36 A |
| Maximum Pulsed Drain Current (IDM) | 100 A |
| On-Resistance (RDS(on)) | ≤ 170 mΩ |
| Package Weight (TO-3P) | 5.5 g |
| Junction Temperature Range | -55 ... +150 °C |
The IXTQ 36N50P uses a TO-3P package, while the IXTT 36N50P uses a TO-268 package.
The maximum junction temperature (TJM) is 150 °C.