IXTK 140N20P is a high performance N-channel enhancement mode power MOSFET. It has a maximum voltage of 200V and a maximum current of 140A. It has international standard packages, unclamped inductive switching (UIS) rating, low package inductance, etc., easy to drive and protect.
This document provides technical data for the IXYS IXTK 140N20P, an N-channel enhancement mode power MOSFET designed for high-power applications. Key features include unclamped inductive switching (UIS) rating and low package inductance to facilitate easy driving and protection.
| Drain-Source Voltage (VDS) | 200 V |
|---|---|
| Continuous Drain Current at 25°C (ID25) | 140 A |
| On-Resistance VGS=10V, ID=0.5ID25 (RDS(on)) | 18 mΩ |
| Thermal Resistance Junction-to-Case (RthJC) | 0.18 K/W |
Yes, it features Unclamped Inductive Switching (UIS) rating.
The device has a maximum drain-source voltage of 200 V.
The maximum continuous drain current (ID) at a case temperature of 25 °C is 140 A.
The typical on-resistance (RDS(on)) is 18 mΩ when VGS is 10 V and ID is 0.5 times ID25.