This datasheet is about IXTK 180N15's technical parameters, including maximum voltage, maximum current, minimum resistance.
This document provides technical information and specifications for the IXYS IXTK180N15, an N-channel enhancement mode MOSFET. Key features include a low RDS(on) HDMOSTM process, rugged polysilicon gate cell structure, and international standard packaging suitable for motor controls and switched-mode power supplies.
| Drain-Source Voltage (VDS) | 150 V |
|---|---|
| Continuous Drain Current (ID25C) | 180 A |
| RDS(on) at VGS=10V, ID=0.5A | 10 mΩ |
| Package Type | TO-264 AA (IXTK) |
It is designed for motor controls, DC choppers, and switched-mode power supplies.
The maximum operating junction temperature is 150°C.