IXTK 62N25 is a high current N-channel enhancement mode MOSFET with low RDS(on), rugged polysilicon gate cell structure, international standard package, fast switching time, etc. It is suitable for motor control, DC chopper, switched-mode power supply and other applications.
This document is a technical datasheet for the IXYS IXTK62N25 N-Channel Enhancement Mode MOSFET. It provides comprehensive data on device features, including low RDS(on) and rugged polysilicon gate cell structure, suitable for applications such as motor controls and switched-mode power supplies.
The datasheet details maximum ratings like a drain-source voltage of 250V and continuous current of 62A at 25°C. It also lists electrical characteristics including input capacitance (Ciss), output capacitance (Coss), reverse transfer capacitance (Crss), and switching times, along with the physical dimensions for the TO-264 AA package.
| Drain-Source Voltage (VDS) | 250 V |
|---|---|
| Continuous Drain Current (ID) at 25°C | 62 A |
| Peak Pulse Drain Current (IDM) | 248 A |
| On-Resistance (RDS(on)) | 35 mΩ |
| Input Capacitance (Ciss) | 6600 pF |
| Output Capacitance (Coss) | 1125 pF |
| Turn-on Delay Time (td(on)) | 30 ns |
| Rise Time (tr) | 25 ns |
| Fall Time (tf) | 15 ns |
| Thermal Resistance Junction-to-Case (RthJC) | 0.30 K/W |
| Package Type | TO-264 AA |
The device is designed for motor controls, DC choppers, and switched-mode power supplies.
Yes, it features an easy-to-mount design with one isolated mounting screw hole.
The typical reverse recovery time (trr) for the diode is 360 ns.