IXTQ 82N25P is a N-Channel Enhancement Mode Power MOSFET from IXYS. It features international standard packages, unclamped inductive switching (UIS) rating, low package inductance and easy driving and protection.
This document is a preliminary data sheet for the IXYS IXTK 82N25P Power MOSFET. It provides detailed information regarding the device's electrical characteristics, thermal performance, and available international standard packages.
The datasheet covers maximum ratings such as drain-source voltage (VDSS) of 250 V and continuous drain current (ID) of 82 A at 25 °C. It also includes characteristic values for on-resistance, capacitance, switching times, and source-drain diode performance under various test conditions.
| Drain-Source Voltage (VDSS) | 250 V |
|---|---|
| Continuous Drain Current (ID) | 82 A |
| Operating Junction Temperature (TJ) | -55 ... +150 °C |
| Package Options | TO-3P, TO-264, TO-268 |
The device has a maximum drain-source voltage of 250 V.
The maximum continuous drain current is 82 A.
The specified mounting torque is 1.13 Nm.