IXYS IXTK 33N50 MegaMOS FET Preliminary Datasheet

IXTK 33N50 is a high current N-channel enhancement mode MOSFET from IXYS. It has a maximum drain-source voltage of 500V and a maximum continuous drain current of 33A. It has fast switching speeds and is used in motor controls, DC choppers, uninterruptible power supplies (UPS), switch-mode and resonant-mode power supplies.


IXYS IXTK 33N50 MegaMOS FET Preliminary Datasheet - cover page
Brand
IXYS
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
4
File format
PDF
File size
84 KB
Published
07 June, 2012
Updated
01 October, 2023
MD5 checksum
A411E1C2173E65D3EEA158FFFEFE5E2A

About this manual

This document provides preliminary data for the IXYS IXTK 33N50, a high-current N-channel enhancement mode MegaMOS™FET. It includes maximum ratings such as a drain-source voltage of 500 V and a continuous current of 33 A at 25°C.

What's inside

  • Maximum Ratings
  • Electrical Characteristics
  • Source-Drain Diode Ratings
  • Mechanical Dimensions
  • Output Characteristics
  • Thermal Resistance
  • Gate Charge
  • Capacitance Curves
  • Transient Thermal Resistance
  • Applications

Specifications

Drain-Source Voltage (Vss)500 V
Continuous Drain Current (Ios)33 A
Package TypeTO-264 AA
Operating Temperature Range (Tj)-55 to +150 °C

Frequently asked questions

What is the maximum mounting torque for this device?

The maximum mounting torque is 1.13 Nm (or 10 lb.in).

What are the applications for the IXTK 33N50?

It is suitable for motor controls, DC choppers, UPS, and switch-mode power supplies.

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