This document describes the features and characteristics of IXYS' N-channel enhancement mode MegaMOSTMFET product, including maximum ratings, test conditions, and characteristic values.
This document is a technical datasheet for the IXYS IXTH14N100, an N-Channel Enhancement Mode MOSFET utilizing HDMOS process technology. The device features a rugged polysilicon gate cell structure and is housed in an international standard JEDEC TO-247 AD package.
| Voltage Rating (Voss) | 1000 V |
|---|---|
| Continuous Drain Current (Ios) | 14 A |
| Package Type | TO-247 AD |
| Thermal Resistance Junction-to-Ambient (Rthja) | 0.35 K/W |
The device is suitable for switch-mode and resonant-mode power supplies, motor controls, uninterruptible power supplies (UPS), and DC choppers.
The maximum lead temperature for soldering is 300 °C.