ixth/ixtm 6 n80/6 n80a is a power mosfet produced by ixys, which has the characteristics of low rds(on), hdmostm process, rugged polysilicon gate cell structure, low package inductance (<5 nH)
This document provides a technical overview of the IXYS Standard Power MOSFET, specifically models 6N80 and 6N80A. It details maximum ratings, electrical characteristics, and package dimensions for devices available in TO-204 AA (IXTM) and TO-247 AD (IXTH) packages.
| Continuous Drain Current (ID) | 6 A |
|---|---|
| Maximum Power Dissipation (PD) | 180 W |
| Operating Junction Temperature Range | -55 ... +150 °C |
These MOSFETs are designed for switch-mode and resonant-mode power supplies, motor controls, and DC choppers.
The device supports a continuous drain current of 6 A when the case temperature is 25°C.
The MOSFET has a maximum power dissipation of 180 W at a case temperature of 25°C.
The specified mounting torque for the TO-247 package is 1.13 Nm or 10 lb.in.