This document is about the technical information of IXYS products, including the features and performance parameters. The product adopts low RDS (on) HDMOSTM process and has a rugged polysilicon gate cell structure. It is suitable for applications such as motor controls, DC choppers, switched-mode power supplies, DC-DC converters, and linear regulators.
This document provides technical information for the IXYS IXTK 250N10, a high current MegaMOS™ FET. It is an N-channel enhancement mode device designed for applications such as motor controls, DC choppers, switched-mode power supplies, and linear regulators.
The datasheet lists maximum ratings including a drain-source voltage of 100 V and a continuous drain current of 250 A at 25°C. It also specifies electrical characteristics like on-resistance (RDS(on)) and switching times, along with the mechanical outline dimensions for the TO-264 AA package.
| Device Type | N-Channel Enhancement Mode MOSFET |
|---|---|
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) | 250 A |
| Package Type | TO-264 AA |
| On-Resistance (RDS(on)) | 5 mΩ |
You must apply a mounting torque between 0.7 and 6 N·m.