The document describes the features and characteristics of the MITSUBISHI Nch POWER MOSFET FS5SM-18A, which is suitable for high-speed switching applications such as SMPS, DC-DC converters, battery chargers, printers, copiers, HDD, FDD, TV, VCR, personal computers, etc.
This document is a technical datasheet for the Mitsubishi Electric FS5SM-18A Nch Power MOSFET. It outlines the device's physical dimensions and intended applications in high-speed switching circuits such as SMPS, DC-DC converters, battery chargers, and power supplies for printers, copiers, HDDs, FDDs, TVs, VCRs, and personal computers.
The datasheet provides comprehensive maximum ratings and electrical characteristics measured at a channel temperature of 25°C. Key specifications include a drain-source voltage rating of 900V, a pulsed drain current of 15A, and an on-state resistance ranging from 2.15 to 2.80 Ohms. It also includes performance curves for power dissipation derating, safe operating area, output characteristics, switching characteristics, and thermal impedance.
| Drain-source voltage (Vbss) | 900 V |
|---|---|
| Gate-source voltage (Vass) | +30 V |
| Drain current (ID) | 5 A |
| Drain current (Pulsed) (IDM) | 15 A |
| Maximum power dissipation (Pd) | 125 W |
| Channel temperature range | -55 ~ +150 °C |
| Drain-source on-state resistance (rDS(ON)) | 2.15 - 2.80 Ohms |
| Input capacitance (Ciss) | 1050 pF |
The device has a maximum drain-source voltage of 900 V.
The typical weight of this component is 48 g.