FS5VS-10 is a N-type power MOSFET produced by MITSUBISHI. Its maximum drain-source voltage is 500V, maximum drain resistance is 1.8 ohms, and maximum current is 5A.
This document is a technical datasheet for the Mitsubishi Electric FS5VS-10 Nch Power MOSFET. It specifies that the device is designed for high-speed switching applications such as SMPS, DC-DC converters, battery chargers, and power supplies for printers, copiers, HDDs, FDDs, TVs, VCRs, and personal computers.
The datasheet provides comprehensive electrical characteristics including maximum ratings like a drain-source voltage of 500V and a continuous drain current of 5A. It also lists typical values for parameters such as on-state resistance (rDS(ON)), capacitance, and switching times under specific test conditions.
| Drain-source voltage (VDS) | 500 V |
|---|---|
| Gate-source voltage (VGSS) | +30 V |
| Drain current (ID) | 5 A |
| Maximum power dissipation (Pd) | 90 W |
| Channel temperature range | -55 ~ +150 °C |
| Drain-source on-state resistance (rDS(ON)) | Typ. 1.4 Ω, Max. 1.8 Ω |
| Input capacitance (Ciss) | Typ. 600 pF |
It is used in SMPS, DC-DC converters, battery chargers, and power supplies for printers, copiers, HDDs, FDDs, TVs, VCRs, and personal computers.
The continuous drain current rating is 5 A.