FS5UMH-2 is a Nch power MOSFET produced by Mitsubishi. Its maximum on-resistance is 0.44 ohms, its maximum drain-source voltage is 100 volts, and its maximum drain-source current is 5 amps.
This document is a technical datasheet for the Mitsubishi Electric FSS5UMH-2, an N-channel Power MOSFET. The device is specifically designed for high-speed switching use and features a TO-220 package.
The datasheet provides maximum ratings, electrical characteristics, performance curves, and typical application circuits. Key specifications include a drain-source voltage of 100V, a continuous drain current of 5A, and a pulsed drain current of 20A.
| Gate-source voltage (VGSS) | +/-10 V |
|---|---|
| Drain current (ID) | 5 A |
| Pulsed drain current (IDM) | 20 A |
| Maximum power dissipation (Pd) | 20 W |
| Channel temperature range (Tch) | -55 ~ +150 °C |
The maximum power dissipation rating is 20 W.
The device operates between -55 and +150 °C.