FS5ASJ-06 is a Nch power MOSFET produced by Mitsubishi. It has the characteristics of high switching speed, low on-state resistance and low leakage current. It is suitable for motor control, lamp control, solenoid control, DC-DC converter and other applications.
This document is a technical datasheet for the Mitsubishi Electric FS5ASJ-06 Nch Power MOSFET designed for high-speed switching applications. It provides outline drawings and specifies that the device is suitable for motor control, lamp control, solenoid control, and DC-DC converters.
The datasheet lists maximum ratings including a drain-source voltage of 60V, a pulsed drain current of 20A, and a maximum power dissipation of 20W. It also details electrical characteristics such as on-state resistance, capacitance values, and switching times under specific test conditions.
| Gate-source voltage (VGSS) | +20 V |
|---|---|
| Drain current (ID) | 5 A |
| Drain current pulsed (IDM) | 20 A |
| Maximum power dissipation (Pb) | 20 W |
| Channel temperature range (Tch) | -55 ~ +150 °C |
| Drain-source on-state resistance (rDS(ON)) | Typ. 0.14 Ω |
The maximum power dissipation rating is 20 W.
The device operates from -55 to +150 °C for both channel and storage temperatures.
The maximum drain-source voltage is 60 V.