This document provides an outline drawing and specifications of the MITSUBISHI Nch POWER MOSFET FS50VS-2. The product is designed for high-speed switching applications such as motor control, lamp control, solenoid control, and DC-DC converters. It features a drain-source voltage of 100V, a drain current of 50A, and a drain-source resistance of 55mΩ.
This document is a technical datasheet for the Mitsubishi FS50VS-2, an N-channel power MOSFET designed for high-speed switching applications. The device features low on-resistance and includes an integrated fast recovery diode.
The text provides detailed electrical characteristics, maximum ratings, and typical performance curves including output characteristics, transfer characteristics, and capacitance versus drain-source voltage. This manual is written in Chinese.
| Drain-source voltage (VDS) | 100V |
|---|---|
| On-state resistance (rDS(ON)) | 55mΩ MAX |
| Integrated Fast Recovery Diode time | 105ns TYP. |
The device is suitable for motor control, lamp control, solenoid control, and DC-DC converters.
This device is intended for high-speed switching uses such as motor control, lamp control, solenoid control, and DC-DC converters.
The maximum drain-source voltage (VDS) for this MOSFET is 100 volts.