Mitsubishi Electric FS5AS-06 Nch Power MOSFET Datasheet

The document describes the features and characteristics of the MITSUBISHI Nch POWER MOSFET FS5AS-06, which is suitable for high-speed switching applications such as motor control, lamp control, solenoid control, and DC-DC converters.


Mitsubishi Electric FS5AS-06 Nch Power MOSFET Datasheet - cover page
Brand
Mitsubishi
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
4
File format
PDF
File size
45 KB
Published
07 June, 2012
Updated
28 September, 2023
MD5 checksum
07D9A803187EE27855DE78D2B8946B38

About this manual

This document is a technical datasheet for the Mitsubishi Electric FS5AS-06 Nch Power MOSFET, designed specifically for high-speed switching applications. The device features a drain-source voltage rating of 60V and a continuous drain current of 5A.

The datasheet provides comprehensive electrical characteristics including input capacitance (280 pF typical), output capacitance (120 pF typical), and thermal resistance (6.25 °C/W). It also includes performance curves for power dissipation, safe operating area, and switching characteristics under various temperature conditions.

What's inside

  • Outline Drawing
  • Application
  • Maximum Ratings
  • Electrical Characteristics
  • Performance Curves
  • Power Dissipation Derating Curve
  • Maximum Safe Operating Area

Specifications

Gate-source voltage (VGSS)+20 V
Drain current (ID)5 A
Maximum power dissipation (Pb)20 W
Channel temperature range (Tch)-55 ~ +150 °C
Input capacitance (Ciss)280 pF (Typical)
Output capacitance (Coss)120 pF (Typical)
Thermal resistance (Rth ch-c)6.25 °C/W

Frequently asked questions

What are the recommended applications for this MOSFET?

This device is intended for motor control, lamp control, solenoid control, and DC-DC converters.

What is the maximum power dissipation rating?

The maximum power dissipation is 20 W when the channel temperature is 25°C.

What is the drain-source breakdown voltage?

The drain-source breakdown voltage is rated at 60 V when the gate-source voltage is 0 V.

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