FS50VS-3 is a high-performance power MOSFET from MITSUBISHI. Its maximum on-resistance is 31mΩ, maximum drain-source voltage is 150V, and maximum drain current is 50A. This device is packaged in a TO-220S package and is suitable for applications such as motor control, lamp control, relay control, and DC-DC converters.
This document is a technical datasheet for the Mitsubishi Electric FS50VS-3, an N-channel Power MOSFET designed specifically for high-speed switching applications. The device features a TO-220S package and is intended for use in motor control, lamp control, solenoid control, and DC-DC converters.
The datasheet provides comprehensive electrical characteristics including maximum ratings such as a drain-source voltage of 150V and a pulsed drain current of 200A. It also details typical performance curves for capacitance, on-state resistance, switching times, and thermal impedance under various operating conditions.
| Gate-source voltage (VGSS) | +20 V |
|---|---|
| Drain current (ID) | 50 A |
| Pulsed Drain current (IDM) | 200 A |
| Maximum power dissipation (Pd) | 125 W |
| Channel temperature range | -55 ~ +150 °C |
| Drain-source on-state resistance (rDS(ON)) | 2.4 31 mΩ |
| Input capacitance (Ciss) | 6540 pF |
It is designed for motor control, lamp control, solenoid control, and DC-DC converters.
The maximum pulsed drain current (IDM) is 200 A.
The device uses a TO-220S package.