This document describes the features and characteristics of the MITSUBISHI Nch POWER MOSFET FS50UM-3, which is suitable for high-speed switching applications such as motor control, lamp control, solenoid control, and DC-DC converters.
This document is a technical datasheet for the Mitsubishi Electric FS50UM-3, an Nch Power MOSFET designed for high-speed switching applications. The device features a TO-220 package and is suitable for motor control, lamp control, solenoid control, and DC-DC converters.
| Drain-source voltage (VDS) | 150 V |
|---|---|
| Gate-source voltage (VGS) | +20 V |
| Drain current continuous (ID) | 50 A |
| Drain current pulsed (IDM) | 200 A |
| Maximum power dissipation (Pd) | 125 W |
| Channel temperature range | -55 ~ +150 °C |
The maximum power dissipation is rated at 125 W.
The channel temperature ranges from -55 to +150 °C.
The typical weight value is 2.0 g.