This document describes the features and characteristics of the MITSUBISHI Nch POWER MOSFET FS50KM-3, which is suitable for high-speed switching applications such as motor control, lamp control, solenoid control, and DC-DC converters.
This document is a technical datasheet for the Mitsubishi Electric FS50KM-3, an N-channel Power MOSFET intended for high-speed switching uses. The device features an integrated fast recovery diode and is packaged in a TO-220FN case.
The datasheet provides maximum ratings, electrical characteristics, and typical performance curves. Key specifications include a drain-source breakdown voltage of 150V, a continuous drain current of 50A, and a pulsed drain current capability of up to 200A.
| Drain-source breakdown voltage (VDS) | 150 V |
|---|---|
| Gate-source voltage (VGSS) | +20 V |
| Drain current continuous (ID) | 50 A |
| Drain current pulsed (IDM) | 200 A |
| Maximum power dissipation (Pd) | 35 W |
| Channel temperature range (Tj) | -55 ~ +150 °C |
| Package type | TO-220FN |
The device has a maximum drain-source voltage of 150 V and a continuous drain current rating of 50 A.
The maximum power dissipation is rated at 35 W.
This MOSFET is intended for motor control, lamp control, solenoid control, and DC-DC converters.