This is a FS50SM-2 MOSFET specification sheet, which introduces the MOSFET's maximum voltage, current, power and temperature parameters.
This document is a technical datasheet for the Mitsubishi Electric FS50SM-2, an Nch Power MOSFET designed for high-speed switching applications. The device features an integrated fast recovery diode and is suitable for motor control, lamp control, solenoid control, and DC-DC converters.
The datasheet provides comprehensive electrical characteristics including drain-source breakdown voltage of 100V, a maximum pulsed drain current of 200A, and typical on-state resistance values. It also includes performance curves for power dissipation derating, safe operating areas, capacitance versus voltage, and switching characteristics.
| Drain-source voltage (VDS) | 100 V |
|---|---|
| Gate-source voltage (VGS) | +20 V |
| Drain current (ID) | 50 A |
| Drain current pulsed (IDM) | 200 A |
| Maximum power dissipation (Pd) | 70 W |
| Channel temperature range | -55 ~ +150 °C |
The device is intended for use in motor control, lamp control, solenoid control, and DC-DC converters.
The maximum power dissipation is rated at 70 W when the case temperature is 25°C.
The device can operate with a channel temperature ranging from -55 to +150 °C.