This document introduces the MITSUBISHI Nch POWER MOSFET FS50SM-3 for high-speed switching applications, including motor control, lamp control, solenoid control, DC-DC converters, etc. It features a drain-source voltage of 150V, a drain current of 50A, and a drain-source resistance of 31mΩ.
This document is a technical datasheet for the Mitsubishi Electric FS50SM-3, an Nch Power MOSFET intended for high-speed switching uses. The device features a TO-3P package and is suitable for applications such as motor control, lamp control, solenoid control, and DC-DC converters.
| Drain-source voltage (VDSS) | 150 V |
|---|---|
| Gate-source voltage (VGSS) | +20 V |
| Drain current (ID) | 50 A |
| Maximum power dissipation (Pb) | 150 W |
| Channel temperature range (Tch) | -55 ~ +150 °C |
| Drain-source on-state resistance (rDS(ON)) | Typ. 24 mΩ |
| Input capacitance (Ciss) | Typ. 654 pF |
The device is designed for motor control, lamp control, solenoid control, and DC-DC converters.
The typical weight for the FS50SM-3 power MOSFET is 48 g.