IRF5805 is a P-channel MOSFET from International Rectifier that features an ultra-low on-resistance and is ideal for battery and load management applications.
The document details the specifications of the IRF5805, a P-channel MOSFET designed for battery and load management applications. It highlights features such as ultra-low on-resistance per silicon area and availability in the TSOP-6 package, which offers significant space savings compared to SOT-23.
| Drain-Source Voltage (Vds) | -30 V |
|---|---|
| Continuous Drain Current (Id) @ 25°C | -3.8 A |
| Continuous Drain Current (Id) @ 70°C | -3.0 A |
| Maximum Power Dissipation (Pd) @ 25°C | 2 W |
| Junction and Storage Temperature Range | -55 to +150 °C |
| Package Type | TSOP-6 |
The maximum junction and storage temperature range is from -55 to +150 °C.
It is designed for use in battery and load management applications.