The FETKYTM family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.
This document provides the electrical characteristics and absolute maximum ratings for the IRF7321D2PbF, a Co-packaged HEXFET Power MOSFET and Schottky Diode. The device utilizes Generation 5 Technology and is designed for buck regulator and power management applications.
| Continuous Drain Current (ID) @ TA = 25°C | -4.7 A |
|---|---|
| Pulsed Drain Current (IDM) | -38 A |
| Power Dissipation (PD) @ TA = 25°C | 2.0 W |
| Drain-to-Source Breakdown Voltage (V(BR)DSS) | -30 V |
| Gate-to-Source Voltage (VGS) | ± 20 V |
| Junction and Storage Temperature Range | -55 to +150 °C |
| Package Type | SO-8 |
| Forward Voltage Drop (Vfm) Max @ If = 3.0A, Tj = 25°C | 0.57 V |
The maximum junction temperature is 150°C.
Yes, the device is lead-free.
The maximum forward voltage drop is 0.79V at If = 6.0A and Tj = 125°C.