IRF3711ZPbF is a power MOSFET produced by IRF company. It is mainly used in high frequency synchronous buck converters. It has the characteristics of low RDS(on), ultra-low gate impedance, fully characterized avalanche voltage and current.
This datasheet provides detailed electrical specifications for the IRF3711ZPbF, IRF3711ZSPbF, and IRF3711ZLPbF HEXFET® Power MOSFETs. These devices are designed for high-frequency synchronous buck converters in computer processor power applications. Key parameters include voltage ratings, on-resistance, gate charge, and thermal characteristics. The document also covers avalanche and diode characteristics, switching times, and application guidelines for non-isolated DC/DC converters.
| Drain-to-Source Voltage | 20 V |
|---|---|
| Gate-to-Source Voltage | +20 V |
| Continuous Drain Current @ 25°C | 92 A |
| Continuous Drain Current @ 100°C | 65 A |
| Pulsed Drain Current | 380 A |
| Maximum Power Dissipation @ 25°C | 79 W |
| Maximum Power Dissipation @ 100°C | 40 W |
| Gate Threshold Voltage | 2.0 V |
| Drain-to-Source On-Resistance @ 4.5V | 6.0 mΩ |
| Single Pulse Avalanche Energy | 130 mJ |
| Avalanche Current | 12 A |
| Repetitive Avalanche Energy | 79 mJ |
| Diode Forward Voltage | 1.0 V |
| Reverse Recovery Time | 16 to 24 ns |
| Gate Charge (Qg) | 16 to 24 nC |
The maximum drain-to-source voltage is 20 V.
The gate threshold voltage ranges from 1.55 V to 2.45 V.
The single pulse avalanche energy is 130 mJ.
The reverse recovery time ranges from 16 ns to 24 ns.