This document introduces the features and characteristics of Huawei MateBook14s.
This document is a datasheet for the IRFI9610GPbF, a P-Channel HEXFET Power MOSFET manufactured by International Rectifier. The device is housed in a TO-220 Fullpak package, which provides high voltage isolation equivalent to a 100 micron mica barrier and eliminates the need for additional insulating hardware. It is designed for commercial and industrial applications where high voltage isolation is required.
| Continuous Drain Current (Tc=25°C) | -2.0 A |
|---|---|
| Continuous Drain Current (Tc=100°C) | -1.3 A |
| Pulsed Drain Current | -8.0 A |
| Power Dissipation (Tc=25°C) | 27 W |
| Gate-to-Source Voltage | +20 V |
| Static Drain-to-Source On-Resistance | 3.0 Ω |
| Operating Junction Temperature | -55 to +150 °C |
| Junction-to-Case Thermal Resistance | 46 °C/W |
| Junction-to-Ambient Thermal Resistance | 65 °C/W |
| Breakdown Voltage | -200 V |
The device uses a TO-220 Fullpak package.
Yes, the device is lead-free.
The maximum operating junction temperature is +150°C.