This datasheet provides information on absolute maximum ratings for IRFE310, JANTX-, JANTXV-, 2N6786U including continuous drain current, continuous drain current, pulsed drain current, max. power dissipation, linear derating factor, gate-to-source voltage, single pulse avalanche energy, peak diode recovery dv/dt, operating junction temperature, storage temperature range, surface temperature and weight.
This document provides technical data for the IRFE310, a 400V, 1.25A N-channel HEXFET transistor available in a leadless chip carrier (LCC) package. The device is designed for high-reliability applications such as switching power supplies and motor controls.
| Continuous Drain Current (ID) | 1.25 A @ Tj = 25°C |
|---|---|
| Breakdown Voltage (BVdss) | 400 V |
| Package Type | Leadless Chip Carrier (LCC) |
The maximum power dissipation at Tc = 25°C is 15 W.
The device operates between -55°C and 150°C.