M5M5256DFP,VP,RV is a 262,144-bit CMOS static RAM produced by Mitsubishi Electric. It is fabricated using high-performance 3 polysilicon CMOS technology and has a high density and low power consumption. It is ideal for memory systems that require simple interface.
This document describes the M5M5256DFP, VP, and RV devices, which are 262,144-bit (32,768-word by 8-bit) CMOS static RAMs fabricated using high-performance 3 polysilicon CMOS technology. The series is designed for memory systems requiring simple interfaces and includes variants with low stand-by current suitable for battery back-up applications.
The datasheet provides comprehensive details on device features, package types (including thin small outline packages), pin configurations, functional operation modes via control inputs (/S, /W, /OE), and detailed electrical characteristics. It specifies absolute maximum ratings, DC and AC electrical parameters, timing diagrams, and power-down characteristics for various voltage options ranging from -10V to -15V.
| Memory Capacity | 262,144-bit (32,768-word by 8-bit) |
|---|---|
| Technology | High-performance 3 polysilicon CMOS |
| Access Time (-10VLL) | 100ns |
| Access Time (-12VLL) | 120ns |
| Stand-by Current (XL type) | 0.05pA (typ.) |
| Storage Temperature Range | -65~150 °C |
The device is organized as 32,768-words by 8-bits.
Yes, it has a small stand-by current suitable for battery back-up applications.
The devices are available in 28-pin 450 mil SOP and 28-pin TSOP (Thin Small Outline Package).