ASI NE21935 is a high frequency NPN transistor with features including high frequency 8.0 GH, low noise 1 dB at 0.5 GHz.
The ASI NE21935 is an NPN silicon high frequency transistor designed for general purpose and small signal amplifier and oscillator applications up to 6.0 GHz. Key features include low noise performance of 1 dB at 0.5 GHz and a maximum operating frequency of 8.0 GHz.
| Operating Frequency | up to 6.0 GHz |
|---|---|
| Noise Figure | 1 dB at 0.5 GHz |
| Collector-Emitter Voltage (Vceo) | 10 V |
| Power Dissipation (Pdiss) | 580 mW @ Ta = 25 °C |
The device supports amplifier and oscillator applications up to 6.0 GHz.
The maximum power dissipation is 580 mW when the ambient temperature is 25 °C.
The device operates from -65 °C to +200 °C.