MT5C1008 is a low-power, high-performance CMOS memory from Austin Semiconductor, Inc. It supports 12, 15, 20, 25, 35, 45, 55 and 70 ns storage speed and can be optionally packaged in ceramic DIP, ceramic LCC, ceramic Flatpack, ceramic SOJ and other forms.
The Austin Semiconductor MT5C1008 is a high-speed, low-power Static Random Access Memory (SRAM) with a capacity of 128K x 8 bits. It utilizes a four-transistor memory cell fabricated using double-layer metal and polysilicon technology. The device supports dual chip enable inputs (CE1\, CE2) and an output enable input (OE\), allowing outputs to be placed in High-Z for flexible system design.
| Capacity | 128K x 8 |
|---|---|
| Access Time Options | 12, 15, 20, 25, 35, 45, 55 and 70 ns |
| Power Supply Voltage | +5V (+10%) |
| Operating Temperature Range | -55°C to +125°C |
The device is available with access times of 12, 15, 20, 25, 35, 45, 55 and 70 ns.
Yes, it supports a 2V data retention mode for low power applications.