U1ZB6.8~U1ZB390 is a zener diode produced by Toshiba, with an average power dissipation of 1.0W and a zener voltage range of 6.8~390V. The outer casing is a surface-mounted plastic package.
This document is a technical datasheet for the Toshiba U1ZB6.8~U1ZB390 series of silicon diffused type zener diodes. The components are designed with constant voltage regulation capabilities and feature surface mounting in a plastic mold package.
The datasheet provides detailed maximum ratings, including a power dissipation of 1.0 W and a junction temperature range of -40°C to 150°C. It also lists specific electrical characteristics for various zener voltages ranging from 6.8 V to 390 V.
| Power Dissipation | 1.0 W |
|---|---|
| Zener Voltage Range | 6.8~390 V |
| Junction Temperature | -40~150 °C |
| Storage Temperature Range | -40~150 °C |
The diodes use a surface mounting plastic mold package.
The maximum average power dissipation is rated at 1.0 W.
The junction temperature range is -40 to 150 °C, and the storage temperature range is also -40 to 150 °C.
The Zener voltage ranges from a minimum of 6.2 V to a maximum of 390 V.