The 2SC1815(L) is a high quality power amplifier produced by TOSHIBA. This product features high breakdown voltage, high current output capability, excellent linearity and low noise.
This document is a technical datasheet for the Toshiba 2SC1815(L), an audio frequency voltage amplifier transistor utilizing Silicon NPN Epitaxial Type (PCT process). It specifies applications such as low noise amplifiers and provides comprehensive electrical parameters including DC current gain, transition frequency, and noise figure.
| Collector-emitter voltage | 50 V (min) |
|---|---|
| Emitter-base voltage | 5 V |
| Collector current | 150 mA (max) |
| Base current | 50 mA |
| Collector power dissipation | 400 mW |
| Junction temperature | 125 °C |
| Noise figure (typ.) | 0.2 dB |
The device uses a JEDEC TO-92 package.
Yes, it is complementary to the 2SA1015 (L) in O, Y, and GR classes.