The SB220S - SB2B0S is a Schottky diode produced by Toshiba. It has the characteristics of high current capability, high surge current capability, high reliability, high efficiency, low power loss, low cost and low forward voltage drop.
This document provides technical specifications for the EIC SB220S through SB2B0S series of Schottky Barrier Rectifier Diodes. Key features include high current capability, low forward voltage drop, and a maximum average forward current of 2.0 Amps.
The datasheet lists maximum ratings such as peak reverse voltage ranging from 20 to 100 Volts and includes typical electrical characteristic curves for forward and reverse operation at various temperatures.
| Junction Temperature Range (T_J) | -65 to +125 °C |
|---|---|
| Case Style | DO-41 Molded plastic |
You must derate the current by 20% when using a capacitive load.