RM11A - RM11C SILICON RECTIFIER DIODES are RM11A series silicon rectifier diodes with a rated maximum reverse voltage of 600 - 1000 volts and a rated average forward current of 1.2 amps. The product features high current capability, high surge current capability, high reliability, low reverse current and low forward voltage drop.
This document provides technical specifications and electrical characteristics for the EIC RM11A, RM11B, and RM11C silicon rectifier diodes. Key features include high current capability, high surge current capability, and low reverse current. The devices are housed in a D2 molded plastic case with axial leads.
| Maximum Average Forward Current | 12 A |
|---|---|
| Maximum Repetitive Peak Reverse Voltage | 600 V (RM11A) |
| Maximum Forward Voltage | 0.92 V |
| Maximum DC Reverse Current | 10 mA |
| Peak Forward Surge Current | 100 A |
| Typical Junction Capacitance | 30 pF |
| Typical Thermal Resistance | 50 °C/W |
| Junction Temperature Range | -65 to +175 °C |
The maximum average forward current is 12 A.
The maximum forward voltage at 1.5 Amps is 0.92 V.
The peak forward surge current is 100 A for an 8.3ms single half sine wave.