BZX55C2V4 ~ BZX55C200 silicon zener diodes VZ : 2.4 - 200 Volts PD : 500 mW
This document provides a technical overview of the EIC BZX55C series silicon zener diodes, available in DO-35 molded glass packages with axial leads. Key features include high surge current capability, low leakage current, and operation within a junction temperature range of -55 to +175 °C.
The datasheet details maximum ratings such as 500 mW power dissipation and lists specific electrical characteristics for various zener voltage options ranging from 2.4V to 200V. It includes tables defining Zener voltage, impedance, leakage current, and temperature coefficients for each model number.
| Power Dissipation | 500 mW |
|---|---|
| Zener Voltage Range | 2.4 - 200 Volts |
The maximum power dissipation rating is 500 mW.
Polarity is indicated by a color band that denotes the cathode end.