VT6J1 is a low voltage drive (1.2V drive) p-channel MOSFET from rohm company, with low on-resistance, small package (VMT6), etc., suitable for switching applications.
The VT6J1 is a low‑on‑resistance, 1.2 V drive P‑channel MOSFET offered in a small VMT6 package. It is intended for switching applications and includes built‑in ESD and body diodes.
The document lists absolute maximum ratings such as a -20 V drain‑source voltage and +10 V gate‑source voltage, as well as typical electrical parameters like a 4.8 mΩ on‑state resistance and 15 pF input capacitance. Characteristic curves and measurement circuit examples illustrate its performance under pulsed and continuous conditions.
| Drain‑source voltage (VDS) | -20 V |
|---|---|
| Gate‑source voltage (VGS) | +10 V |
| Continuous drain current (ID) | 100 mA |
| Pulsed drain current (IDp) | 400 mA |
| Power dissipation (PD) | 0.15 W (total) |
| On‑state resistance (RDS(on)) typical | 4.8 mΩ |
| Input capacitance (CISS) typical | 15.0 pF |
The VT6J1 can tolerate a drain‑source voltage of up to -20 V.
The typical on‑state resistance is about 4.8 mΩ.