VT6M1 is a Nch + Pch MOSFET produced by ROHM, featuring low on-resistance, small package and low voltage drive.
The VT6M1 is a dual MOSFET offering low on‑resistance in a compact VMT6 package, designed for 1.2 V drive applications. It includes both N‑channel and P‑channel devices with typical specifications for voltage, current, and power handling.
The datasheet provides absolute maximum ratings, electrical characteristics, typical output curves, and recommended measurement circuits, along with usage notes and safety warnings for designers.
| Drain‑source voltage (VDS) | 20 V |
|---|---|
| Gate‑source voltage (VGS) | +8 V to +10 V |
| Continuous drain current (ID) | 100 mA |
| Pulsed drain current (ID,pulse) | 400 mA |
| Power dissipation (PD) | 0.15 W total |
| Storage temperature range | -55 °C to +150 °C |
| Maximum channel temperature (TCH) | 150 °C |
| Typical on‑resistance (RDS(on)) | 38 mΩ (typ) |
| Input capacitance (CISS) | 7.1 pF |
| Output capacitance (COS) | 3.3 pF |
| Body diode forward voltage | 1.2 V (typ) |
The VT6M1 can withstand up to 20 V between drain and source.
The typical on‑resistance is 38 mΩ.
The device may be stored from –55 °C to +150 °C.
The continuous drain current is rated at 100 mA.