VT6K1 is a ROHM Nch+Nch MOSFET with low on-resistance, small package and low drive voltage, suitable for switching power supplies and other applications.
The VT6K1 is a low‑on‑resistance, 1.2 V drive N‑channel MOSFET offered in a compact VMT6 package. It is intended for switching applications in general‑purpose electronic equipment.
Key specifications include a 20 V drain‑source rating, +8 V gate‑source rating, continuous drain current of 100 mA, and a pulsed drain current of 400 mA. The device operates up to 150 °C channel temperature and is supplied in an 8000‑piece tape package.
| Drain‑source voltage (VDS) | 20 V |
|---|---|
| Gate‑source voltage (VGS) | +8 V |
| Continuous drain current (ID) | 100 mA |
| Pulsed drain current (IDp) | 400 mA |
| Power dissipation (PD) | 0.15 W total |
| Channel temperature (TCH) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
The VT6K1 can withstand up to 20 V between drain and source.
The device is designed for a low‑voltage drive of 1.2 V on the gate.
VT6K1 is supplied in a small VMT6 surface‑mount package.
Yes, the notice advises designing an ESD protection circuit for the product.