RHP020N06 is a N-channel MOSFET from ROHM. It features low on-resistance, high switching speed and wide SOA. It is suitable for switching circuits.
The RHP020N06 is a 4 V drive N‑channel MOSFET designed for low on‑resistance, high‑speed switching, and a wide safe operating area. It is suitable for applications such as power supplies, motor drivers, and general‑purpose switching circuits.
The datasheet lists absolute maximum ratings, detailed electrical parameters, thermal resistance data, and typical characteristic curves. Packaging information (Type Code T100, 1000‑piece ordering unit) and body‑diode specifications are also included to aid designers in circuit implementation.
| Drain‑source voltage (VDS) max | 60 V |
|---|---|
| Gate‑source voltage (VGS) max | +20 V |
| Continuous drain current (ID) | 2 A |
| Pulsed drain current (ID) | 8 A |
| Total power dissipation (PD) | 2 W |
| Channel temperature limit | 150 °C |
| Storage temperature range | -55 to +150 °C |
| Thermal resistance (RθJA) | 62.5 °C/W |
| Input capacitance (Ciss) | 140 pF |
| Output capacitance (Coss) | 50 pF |
| Reverse transfer capacitance (Crss) | 40 pF |
| Total gate charge (Qg) | 7.14 nC |
The device can withstand up to 60 V between drain and source.
It is rated for a continuous drain current of 2 A.
The total gate charge is specified as 7.14 nC.
It is supplied in a Type Code T100 tape package with a basic ordering unit of 1000 pieces.