This document describes the features and characteristics of the RCJ330N25 10V Drive Nch MOSFET product from ROHM, including low on-resistance, fast switching speed, gate-source voltage range of ±30V, and high package power.
This datasheet presents the ROHM RCJ330N25 10 V drive N‑channel MOSFET. It lists key features such as low on‑resistance, fast switching speed, a guaranteed +30 V gate‑source rating and high package power capability.
The document provides absolute maximum ratings, detailed electrical characteristics, thermal resistance data, typical characteristic curves and measurement circuit diagrams, along with packaging specifications and application notes.
| Drain‑source voltage (VDS) | 250 V |
|---|---|
| Gate‑source voltage (VGS) | +30 V |
| Continuous drain current (ID) | 33 A |
| Pulsed drain current (ID, pulse) | 132 A |
| Power dissipation (PD) at 25 °C | 40 W |
| Maximum channel temperature (TCH) | 150 °C |
| Thermal resistance, case to channel (RθJC) | 3.12 °C/W |
| Input capacitance (Ciss) | 4500 pF |
| Output capacitance (Coss) | 220 pF |
| Reverse transfer capacitance (Crss) | 130 pF |
| Total gate charge (Qg) | 80 nC |
| Gate threshold voltage (Vth) | 3 – 5 V |
The RCJ330N25 is rated for a maximum drain‑source voltage of 250 V.
The device can handle a gate‑source voltage of up to +30 V.
The continuous drain current is specified as 33 A.
It can dissipate up to 40 W when the case temperature is 25 °C.