RCX120N20 is a N-channel MOSFET produced by ROHM Company. It has the characteristics of low on-resistance, low input capacitance, high ESD, and is suitable for switching power supplies, drive circuits and other applications.
The RCX120N20 is a 10 V drive N‑channel MOSFET from ROHM, featuring low on‑resistance, low input capacitance, and high ESD robustness. It is supplied in a TO‑220FM package and is intended for switching applications in general‑use electronic equipment.
The datasheet lists absolute maximum ratings, thermal resistance, detailed electrical characteristics, characteristic curves, and example measurement circuits. It also includes a notice outlining usage restrictions and safety considerations.
| Drain‑source voltage (VDS) | 200 V |
|---|---|
| Gate‑source voltage (VGS) | +30 V |
| Continuous drain current (ID) | 12 A |
| Power dissipation (PD) | 40 W |
| Thermal resistance, case to junction (RθJC) | 3.125 °C·W⁻¹ |
| Package | TO‑220FM |
The maximum drain‑source voltage is 200 V.
It is supplied in a TO‑220FM package.
The thermal resistance is 3.125 °C·W⁻¹.
The device can handle up to 12 A continuous drain current.