RCX080N25 is a low-voltage N-channel MOSFET produced by ROHM. It features low on-resistance, low input capacitance, and high ESD. It is suitable for switching applications.
This datasheet describes the ROHM RCX080N25 N‑channel MOSFET, including its structure, key features such as low on‑resistance and high ESD tolerance, and typical application as a switching device. Packaging information (TO‑220FM) and ordering details are also listed.
The document contains absolute maximum ratings, thermal resistance data, detailed electrical characteristics (voltage, current, capacitance, gate charge), characteristic curves, and measurement circuit diagrams. A notice at the end outlines usage restrictions and legal disclaimer.
| Drain‑source voltage (VDS) | 250 V |
|---|---|
| Gate‑source voltage (VGS) | +30 V |
| Continuous drain current (ID) | 8 A |
| Pulsed drain current (ID,pulse) | 32 A |
| Power dissipation (PD) | 35 W |
| Thermal resistance, case to junction (RθJC) | 3.57 °C/W |
| Package | TO‑220FM |
| Input capacitance (Ciss) | 840 pF |
| Output capacitance (Coss) | 50 pF |
| Total gate charge (Qg) | 15 nC |
The maximum drain‑source voltage is 250 V.
It is supplied in a TO‑220FM package.
The continuous drain current rating is 8 A.
The channel‑to‑case thermal resistance is 3.57 °C/W.