This document describes the features and characteristics of the RCD060N25 10V Drive Nch MOSFET product produced by ROHM, including low on-resistance, high-speed switching, wide range of SOA, simple drive circuits, and easy parallel use.
The ROHM RCDO60N25 is a 10 V drive N‑channel MOSFET offering low on‑resistance, high‑speed switching, and a wide safe operating area. The datasheet provides absolute maximum ratings, electrical characteristics, and typical performance curves for design reference.
Key sections include features, application notes, absolute maximum ratings, thermal resistance, detailed electrical specifications, characteristic curves, and measurement circuit diagrams. A notice at the end outlines usage restrictions and legal information.
| Drain‑source voltage (VDS) | 250 V |
|---|---|
| Gate‑source voltage (VGS) | +30 V |
| Continuous drain current (ID) | 6 A |
| Pulsed drain current (ID(pulse)) | 24 A |
| Power dissipation (PD) | 20 W |
| Maximum channel temperature (TCH) | 150 °C |
| Storage temperature range (TS) | -55 °C to +150 °C |
| Typical on‑state resistance (RDS(on)) | 0.41 mΩ |
The device can withstand up to 250 V between drain and source.
It can be stored from –55 °C up to +150 °C.
The continuous drain current is rated at 6 A.
Typical RDS(on) is about 0.41 mΩ.