RCD100N20 is a 10V drive Nch MOSFET with features of low on-resistance, high-speed switching, wide range of SOA, simple drive circuits, and easy parallel use. It is suitable for switching applications.
The RCD100N20 is a 10 V drive N‑channel MOSFET offered by ROHM. It features low on‑resistance, high‑speed switching, a wide safe operating area, and easy parallel use, making it suitable for a variety of switching applications.
The sheet lists key parameters such as a 200 V drain‑source rating, 30 V gate‑source rating, 10 A continuous drain current, 40 A pulsed drain current, and a maximum power dissipation of 20 W. Thermal resistance, packaging details, and measurement circuit diagrams are also included to aid designers in implementing the device.
| Drain‑source voltage (VDS) | 200 V |
|---|---|
| Gate‑source voltage (VGS) | 30 V |
| Continuous drain current (ID) | 10 A |
| Pulsed drain current (ID,pulse) | 40 A |
| Power dissipation (PD) | 20 W |
| Maximum channel temperature (TCH) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
The device is rated for a maximum drain‑source voltage of 200 V.
It can conduct up to 10 A continuously.
The maximum power dissipation is 20 W.
It can be stored from –55 °C to +150 °C.