The RCD080N25 is a N-channel MOSFET produced by ROHM. Its features are high-speed switching, low impedance, and easy to use.
The RCDO80N25 is a 10 V drive N‑channel MOSFET offering low on‑resistance, high‑speed switching, and a wide safe operating area. It is designed for simple drive circuits and can be paralleled easily.
Typical applications include audio‑visual equipment, office‑automation devices, communication gear, and other general‑purpose electronic products. The device is supplied in a standard TO‑220 package with a basic ordering unit of 2500 pieces.
| Drain‑source voltage (VDS) | 250 V |
|---|---|
| Gate‑source voltage (VGS) | 30 V |
| Continuous drain current (ID) | 8 A |
| Pulsed drain current (IDp) | 32 A |
| Power dissipation (PD) | 20 W |
| Channel‑to‑case thermal resistance (RθJC) | 6.25 °C/W |
The device can withstand up to 250 V between drain and source.
It is rated for a continuous drain current of 8 A.
The MOSFET can dissipate up to 20 W under specified conditions.