RCX330N25 is a N-channel MOSFET produced by ROHM. This product has low on-resistance, fast switching speed, gate voltage ±30V, high package power and other features. It is suitable for switching circuits.
The RCX330N25 is a 10 V drive N‑channel MOSFET in a TO‑220RM package. It offers low on‑resistance, fast switching speed, a gate‑source voltage rating of up to +30 V, and high package power handling.
The datasheet lists absolute maximum ratings, thermal resistance, detailed electrical characteristics, body‑diode data, characteristic curves, and measurement circuit diagrams, along with a notice covering usage and liability.
| Drain‑source voltage (VDS) | 250 V |
|---|---|
| Gate‑source voltage (VGS) | +30 V |
| Continuous drain current (ID) | 33 A |
| Power dissipation (PD) | 40 W |
| Channel‑to‑case thermal resistance (RθJC) | 3.13 °C·W |
The maximum drain‑source voltage is 250 V.
It can handle a continuous drain current of 33 A.
The gate‑source voltage is rated up to +30 V.
The device can dissipate up to 40 W at a case temperature of 25 °C.